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p-n Junction Formation for GUJCET: 11 solved questions

Real GUJCET paper questions on p-n junction formation, part of semiconductor electronics. Each opens with the options, the correct answer and a step-by-step solution. Papers run from 2011 to 2026. No sign-in needed to read them.

What this topic asks

• Depletion region and barrier potential — 10 questions
• Diffusion and drift currents — 1 question

All 11 questions with solutions

• Reverse bias applied to a P-N junction diode . GUJCET 2011
• For a p-n junction the intensity of the electric field is 1×10⁶ V m⁻¹ and the width of the depletion region i… GUJCET 2019
• For PN junction, the width of space charge region is approximately μm. GUJCET 2019
• In a diode, on increasing the forward voltage, the thickness of the depletion layer . GUJCET 2020
• When a forward bias is applied to a p-n junction, it . GUJCET 2022
• When a reverse bias is applied to a p-n junction, it . GUJCET 2025
• When a forward bias is applied to a p-n junction. It . GUJCET 2026
• A potential barrier of 0.50 V exists across a p-n junction. If the depletion region is 5.0×10⁻⁷ m wide, the i… GSEB Board July 2016
• A potential barrier of 0.2 V exists across a p-n junction. If the depletion region is 5.0×10⁻⁷ m wide, the in… GSEB Board July 2018
• In an unbiased p-n junction, holes diffuse from the p-region to n-region because GSEB Board July 2021
• When p-n junction is kept in forward bias, . GSEB Board March 2022