Practice portal › Semiconductor Electronics › p-n Junction Formation
Asked in GUJCET 2022 · Depletion region and barrier potential
Idea: in forward bias the positive terminal of the battery is joined to the p side and the negative terminal to the n side, so the applied field inside the depletion layer points against the built-in field.
The barrier the carriers see becomes V₀ - V instead of V₀.
With a lower barrier the depletion layer narrows, and many more holes from the p side and electrons from the n side have enough energy to cross the junction.
That diffusion is the forward current.
So applying a forward bias lowers the potential barrier.
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