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p-n Junction Formation for JEE: 8 solved questions

Real JEE paper questions on p-n junction formation, part of semiconductor electronics. Each opens with the options, the correct answer and a step-by-step solution. Papers run from 2003 to 2026. No sign-in needed to read them.

What this topic asks

• Depletion region and barrier potential — 5 questions
• Diffusion and drift currents — 3 questions

All 8 questions with solutions

• In a semiconductor p-n diode, the doping concentrations on p-side and n-side are 10¹⁵ atoms/cm³ and 10¹⁸ atom… JEE Main 5th April 2nd Shift 2026
• Statement I: When a Si sample is doped with Boron, it becomes P-type and when doped by Arsenic it becomes N-t… JEE Main 25th Jan 2nd Shift 2023
• If the potential barrier across a p-n junction is 0.6 V. Then the electric field intensity, in the depletion… JEE Main 29th July 1st Shift 2022
• A potential barrier of 0.4 V exists across a p-n junction. An electron enters the junction from the n-side wi… JEE Main 29th June 2nd Shift 2022
• Given below are two statements: one is labelled as Assertion A and the other is labelled as Reason R. Asserti… JEE Main 6th April 2nd Shift 2023
• In an unbiased n-p junction electrons diffuse from n-region to p-region because JEE Main Online 2015
• When p-n junction diode is forward biased, then JEE Main 2004
• In the middle of the depletion layer of a reverse-biased p-n junction, the JEE Main 2003