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The I-V characteristics of a p-n junction diode in forward bias is shown in the figure. The ratio of dynamic resistance, corresponding to forward bias voltage of 2 V and 4 V respectively is [Figure: forward I-V curve rising steeply. Marked points: I=5 mA at 2 V, I=10 mA at 2.1 V, I=200 mA at 4 V, I=250 mA at 4.2 V.]

Asked in JEE Main 26th June 1st Shift 2022 · Biasing and I-V characteristics

Figure: Biasing and I-V characteristics
Answer: (2) 5:1

Step-by-step solution

Dynamic resistance r=(Δ V)/(Δ I).

Near 2 V: r₁=(2.1-2)/((10-5)×10⁻³)=20 Ω

Near 4 V: r₂=(4.2-4)/((250-200)×10⁻³)=4 Ω

r₁:r₂=20:4=5:1

Why the other options are wrong

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