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Asked in NEET 2011 · Biasing and I-V characteristics
Idea: forward bias pushes majority carriers towards the junction, and they fill in the region that had been swept clear.
Connecting the positive terminal to the p-side drives holes towards the junction and electrons in from the n-side.
The applied voltage opposes the built-in barrier, so the net potential across the junction falls.
Less potential to support means less uncovered ionised charge is needed, so the depletion region narrows.
Positive terminal to the p-side, and the depletion region becomes thin.
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