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Match List I with List II. List I: (A) Intrinsic semiconductor, (B) n-type semiconductor, (C) p-type semiconductor, (D) Metals. List II: (I) Fermi-level near the valence band, (II) Fermi-level in the middle of valence and conduction band, (III) Fermi-level near the conduction band, (IV) Fermi-level inside the conduction band. Choose the correct answer from the options given below.

Asked in JEE Main 1st Feb 1st Shift 2023 · Doping and carrier concentration

• (1) (A)-(I), (B)-(II), (C)-(III), (D)-(IV)
• (2) (A)-(III), (B)-(I), (C)-(II), (D)-(IV)
• (3) (A)-(II), (B)-(I), (C)-(III), (D)-(IV)
• (4) (A)-(II), (B)-(III), (C)-(I), (D)-(IV)

Step-by-step solution

Why the other options are wrong

• (1) Shifts every material one place; an intrinsic semiconductor has its Fermi level mid-gap, not near the valence band.
• (2) Puts the intrinsic Fermi level near the conduction band and swaps the n and p positions.
• (3) Swaps n-type and p-type: donors push the Fermi level up, acceptors pull it down.

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