Practice portal › Semiconductor Electronics › Intrinsic and Extrinsic Semiconductors
Asked in GUJCET 2022 · Doping and carrier concentration
Given: 5×10²⁸ silicon atoms per cubic metre, one in a million replaced by pentavalent As, and nᵢ=1.5×10¹⁶ m⁻³.
Idea: the donors fix the electron density, and the hole density then follows from nₑ nₕ=nᵢ², which holds whatever the doping.
Donor density: 1 ppm is a factor 10⁻⁶, so n_D=5×10²⁸×10⁻⁶=5×10²² m⁻³.
That is millions of times larger than nᵢ, so essentially every conduction electron came from an As atom: nₑ=5×10²² m⁻³.
Holes: nₕ=(nᵢ²)/(nₑ), with nᵢ²=(1.5×10¹⁶)²=2.25×10³², and 2.25×10³²÷(5×10²²)=0.45×10¹⁰.
So nₕ=4.5×10⁹ m⁻³, the density the options quote, alongside nₑ=5×10²² m⁻³.
Reading this solution needs no sign-in. You only sign in to practise against the clock and keep your progress.
Practise this with a timer