In a zener diode, the reverse bias voltage is 3 V and the width of the depletion region is 300 A, the electric field intensity will be V cm⁻¹.

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(2) 10⁶. Given: V=3 V dropped across a depletion layer of width d=300 A. Idea: the field inside the layer is the voltage divided by the width it is dropped across, E=V/d. Convert the width: 1 A=10⁻¹⁰ m, so d=300×10⁻¹⁰=3×10⁻⁸ m. E=3/(3×10⁻⁸)=10⁸ V m⁻¹. The blank is in V cm⁻¹, and 1 m=100 cm, so divide by 100. So E=10⁶ V cm⁻¹. A field that enormous is exactly why a thin, heavily doped zener junction breaks down at only a few volts.

In a zener diode, the reverse bias voltage is 3 V and the width of the depletion region is 300 A, the electric field intensity will be ________ V cm⁻¹.

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